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BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 -- 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (s) 128 300 (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 D (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLL6H0514L-130 (SOT1135A)
1 2 3 2 3
sym112
1
BLL6H0514LS-130 (SOT1135B) 1 2 3 drain gate source
[1]
1 2
1
3
sym112
3
2
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name Description BLL6H0514L-130 BLL6H0514LS-130 flanged ceramic package; 2 mounting holes; 2 leads earless flanged ceramic package; 2 leads Version SOT1135A SOT1135B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 100 +13 18 +150 200 Unit V V A C C
BLL6H0514L-130_0514LS-130
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Preliminary data sheet
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NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
5. Thermal characteristics
Table 5. Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions Tcase = 85 C; PL = 130 W tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 % tp = 1 ms; = 10 % 0.17 0.22 0.25 0.23 0.36 K/W K/W K/W K/W K/W Typ Unit
6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 630 mA VDS = 10 V; ID = 135 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 135 mA VGS = VGS(th) + 6.25 V; ID = 135 mA Min 100 1.3 Typ Max 1.8 2.25 1.4 140 Unit V V A A nA m
15.8 18 806 -
1578 mS
200 275
Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol PL VDS Gp RLin D Pdroop(pulse) tr tf Parameter output power drain-source voltage power gain input return loss drain efficiency pulse droop power rise time fall time PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W Conditions Min Typ Max Unit 130 15 7 45 17 10 50 0 20 6 50 0.3 50 50 W V dB dB % dB ns ns
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
3 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
6.1 Ruggedness in class-AB operation
The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 s; = 10 %.
7. Application information
7.1 Impedance information
Table 8. f MHz 1200 1300 1400 Typical impedance ZS 1.21 - j3.44 1.56 - j4.49 2.21 - j4.86 ZL 2.40 - j0.63 2.30 - j0.87 2.00 - j1.71
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
BLL6H0514L-130_0514LS-130
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(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
4 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
7.2 Performance curves
20 Gp (dB) 16 Gp D
001aam262
60 D (%) 50
20 RLin (dB) 16
001aam263
12
40
12
8
30
8
4
20
4
0 1.15
1.25
1.35 f (GHz)
10 1.45
0 1.15
1.25
1.35 f (GHz)
1.45
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %.
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %.
Fig 2.
Power gain and drain efficiency as function of frequency; typical values
Fig 3.
Input return loss as a function of frequency; typical values
20 Gp (dB) 16
(1) (2) (3)
001aam264
60 D (%) 50
001aam265
12
40
8
30
(1) (2) (3)
4
20
0 0 40 80 120 PL (W) 160
10 0 40 80 120 PL (W) 160
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz
Fig 4.
Power gain as a function of load power; typical values
Fig 5.
Drain efficiency as function of load power; typical values
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
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NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
160 PL (W) 120
001aam266
80
(1) (2) (3)
40
0 0 1 2 3 Pi (W) 4
VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz
Fig 6.
Load power as a function of input power; typical values
8. Test information
C3 C8 C1 C2 C4 C5
R2
C9
C11
C10 C13 R1 C12
C6
C7
001aam267
Printed-Circuit Board (PCB) material: Duroid 6006 with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components.
Fig 7.
Component layout
BLL6H0514L-130_0514LS-130
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(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
6 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
Table 9. List of components See Figure 7 for component layout. Component C1 C2, C11 C3, C4, C6, C9, C10 C5, C7, C8 C12 C13 R1 R2
[1] [2] [3]
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor SMD resistor wirewound lead resistor
Value 10 F; 50 V 1 nF 100 pF 43 pF 220 F; 63 V 1 nF 10 2.61 ; 0.25 W
[3] [1] [2] [2]
Remarks
fitted vertically in series with R2 SMD 0603 fitted in series with C13
American Technical Ceramics type 700A or capacitor of same quality. American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality.
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
7 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A
D
A F D1
U1 q 1
B C c
H
U2
p
E1
E
3
w1
A
B
A
2 b
w2
C
Q
0 Dimensions Unit(1) mm A b 5.26 5.00 c D D1 E E1 F H 19.94 18.92
5 scale p 3.30 2.92 Q 1.70
10 mm
q 15.24
U1
U2
w1
w2
max 4.65 nom min 3.76
0.18 9.65 9.65 9.65 9.65 1.14 0.10 9.40 9.40 9.40 9.40 0.89
20.45 9.91 0.25 0.51 20.19 9.65 0.805 0.39 0.01 0.02 0.795 0.38
1.45
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067 inches nom 0.6 min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1135A References IEC JEDEC JEITA
sot1135a_po
European projection
Issue date 09-10-12 09-12-14
Fig 8.
Package outline SOT1135A
All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
BLL6H0514L-130_0514LS-130
Preliminary data sheet
Rev. 1 -- 9 August 2010
8 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
Earless flanged ceramic package; 2 leads
SOT1135B
D
A F 3 D1 D
U1 c 1
H
U2
E1
E
2 b
w2
D
Q
0 Dimensions Unit(1) mm A b 5.26 5.00 c D D1 E E1 F H 19.94 18.92
5 scale Q 1.70 1.45 U1 9.91 9.65 0.39 0.38
10 mm
U2 9.91
w2 0.51
max 4.65 nom min 3.76
0.18 9.65 9.65 9.65 9.65 1.14 0.10 9.40 9.40 9.40 9.40 0.89
9.65 0.39 0.02 0.38
max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1135B References IEC JEDEC JEITA
sot1135b_po
European projection
Issue date 09-10-12 09-12-14
Fig 9.
Package outline SOT1135B
All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
BLL6H0514L-130_0514LS-130
Preliminary data sheet
Rev. 1 -- 9 August 2010
9 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
10. Handling information
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
11. Abbreviations
Table 10. Acronym LDMOS RF VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Voltage Standing-Wave Ratio
12. Revision history
Table 11. Revision history Release date 20100809 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLL6H0514L-130_0514LS-130 v.1
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
10 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
13.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
Preliminary data sheet
Rev. 1 -- 9 August 2010
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NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLL6H0514L-130_0514LS-130
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 1 -- 9 August 2010
12 of 13
NXP Semiconductors
BLL6H0514L(S)-130
LDMOS driver transistor
15. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 August 2010 Document identifier: BLL6H0514L-130_0514LS-130

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